- Sputtering and etch - High-quality films can be grown - Low temperature plasma, prevents deformation of the substrate hyeongseonghaeo - Vacuum measuring system, Power, control the tamperproof geupjak - Quick Exhaust Performance - Also maintain a very low vacuum - Automatic and manual operation can exhaust - Future performance can be upgraded - Digitized control - Can be rapidly deposited - Uniform Thin Film Deposition - Metal and Materials Science, Electrical, electronic devices, semiconductor device development, production, medicine development and production, drug development, new Development of materials and food for the Research Development 2. Specifications - Sputtering method: Down the way - Sputter source: 8. DC & RF Co-process available High power density - Magnetron: D35, Nd-Fe-B, jiknaeng - Chamber size: Dia STS # 304L, 450mm - Substrate heat: up to 200 degrees 1) Sputter source configuration - Dia 8 "Target - Magnet: D35, Nd-Fe-B - Copper backing plate: Dit 8 "x10th - Insulation flange: 8 " 2) The rotary vacuum pump - Pumping speed: 720 L / min - Absolute Pressure: 5x10EXP-4torr - Input Voltage: 1.5 kw, 3 phase, 220 V 3) vacuum pump - Jupeompingrain: SUS # 304, ansi 10 " - Jubaelbeu: Butterfly Valve 10 " - Roughing Valve: Angle type NW 25 - Fore-line valve: NW 25-angle approach - Low Vacuum gauge port 4) plasma generator unit configuration - Power: 2000 watts 5) System frame configuration - In / out tank - Water Line Valve: 3 / 8 "bolbangsik - Chamber nine trillion: SS41 firing paint, hammaton, 60x1200x800xSQ beam 6) diffusion vacuum pump - High through the way - Dual-rotor blade - Pumping speed: 2000L/sec @ N2 - Inlet flange: ASA 10 " 7) Laser ranging system - IR pulse type - 3x25mm 1. Features - Up to 8 "sample to be - Sputtering and etch - High-quality films can be grown - Low temperature plasma, prevents deformation of the substrate hyeongseonghaeo - Vacuum measuring system, Power, control the tamperproof geupjak - Quick Exhaust Performance - Also maintain a very low vacuum - Automatic and manual operation can exhaust - Future performance can be upgraded - Digitized control - Can be rapidly deposited - Uniform Thin Film Deposition - Metal and Materials Science, Electrical, electronic devices, semiconductor device development, production, medicine development and production, drug discovery, development of new materials, and food for the Research Development 2. Specifications - Sputtering method: Down the way - Sputter source: 8. DC & RF Co-process available High power density - Magnetron: D35, Nd-Fe-B, jiknaeng - Chamber size: Dia STS # 304L, 450mm - Substrate heat: up to 200 degrees 1) Sputter source configuration - Dia 8 "Target - Magnet: D35, Nd-Fe-B - Copper backing plate: Dit 8 "x10th - Insulation flange: 8 " 2) The rotary vacuum pump - Pumping speed: 720 L / min - Absolute Pressure: 5x10EXP-4torr - Input Voltage: 1.5 kw, 3 phase, 220 V 3) vacuum pump - Jupeompingrain: SUS # 304, ansi 10 " - Jubaelbeu: Butterfly Valve 10 " - Roughing Valve: Angle type NW 25 - Fore-line valve: NW 25-angle approach - Low Vacuum gauge port 4) plasma generator unit configuration - Power: 2000 watts 5) System frame configuration - In / out tank - Water Line Valve: 3 / 8 "bolbangsik - Chamber nine trillion: SS41 firing paint, hammaton, 60x1200x800xSQ beam 6) diffusion vacuum pump - High through the way - Dual-rotor blade - Pumping speed: 2000L/sec @ N2 - Inlet flange: ASA 10 " 7) Laser ranging system - IR pulse type - 3x25mm
